Defect production in electron‐irradiated,n‐type GaAs
نویسندگان
چکیده
منابع مشابه
MeV ion damage in GaAs single crystals: Strain saturation and role of nuclear and electronic collisions in defect production.
We have reported previously that the perpendicular strain produced in the surface layer (several ~ thick) of GaAs (100) crystals under MeV ion irradiation saturates at ""0. 47. regardless of the doping of the specimen, and that the parallel strain is zero within the experimental error. ~n this paper, the perpendicular strain in GaAs (111) and GaAs (110) crystals saturates at 'V0.3%. The ionizat...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1987
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.339246